GaAs Schottky Wrap-Gate Binary-Decision-Diagram Devices for Realization of Novel Single Electron Logic Architecture

摘要

Novel single electron binary-decision-diagram (BDD) node devices and circuits based on Schottky wrap-gate (WPG) control of AlGaAs/GaAs nanowires were designed, fabricated and characterized for the first time. The WPG BDD node device showed clear path switching as well as conductance oscillation by WPG voltage control. WPG-based BDD OR logic circuits were also successfully fabricated. It is also shown that more complex-functional BDD circuits can be realized by suitable layouts of WPGs and nanowires.